Facile process to clean PMMA residue on graphene using KrF laser annealing

Facile process to clean PMMA residue on graphene using KrF laser annealing

Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA...

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Veröffentlicht in:AIP advances 2018-10, Vol.8 (10), p.105326-105326-6
Hauptverfasser: Hwang, Hyeon Jun, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Graphene
Laser beam annealing
Lasers
Polymethyl methacrylate
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Zusammenfassung:Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA residue as well as the methoxy and carboxyl function groups without causing noticeable damage to the graphene.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5051671