Photogating and high gain in ReS2 field-effect transistors

Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS 2 field-effect transistors (FETs) in which varying the incident optical...

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Veröffentlicht in:	Journal of applied physics 2018-11, Vol.124 (20)
Hauptverfasser:	Garcia, C., Pradhan, N. R., Rhodes, D., Balicas, L., McGill, S. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Field effect transistors High gain Incident light Optical properties Photoconductivity Quantum efficiency Semiconductor devices Threshold voltage Transistors Transition metal compounds
Online-Zugang:	Volltext
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