Photogating and high gain in ReS2 field-effect transistors
Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS 2 field-effect transistors (FETs) in which varying the incident optical...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2018-11, Vol.124 (20) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 20 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 124 |
| creator | Garcia, C. Pradhan, N. R. Rhodes, D. Balicas, L. McGill, S. A. |
| description | Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS
2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs’ threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of
∼10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be
5×104. |
| doi_str_mv | 10.1063/1.5050821 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5050821</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2139302922</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-3f4be5f8ef35741d96dcd07ed260272c4015620330d40ac01d12feedd3996df03</originalsourceid><addsrcrecordid>eNp90E1LAzEQBuAgCtbqwX-w4Elh60yy2d14k-IXFBQ_ziHmY5tSNzVJBf-9Ky16EISBuTy8w7yEHCNMEGp2jhMOHFqKO2SE0Iqy4Rx2yQiAYtmKRuyTg5QWAIgtEyNy8TAPOXQq-74rVG-Kue_mRad8XwzzaJ9o4bxdmtI6Z3UuclR98imHmA7JnlPLZI-2e0xerq-ep7fl7P7mbno5KzWjTS6Zq14td611jDcVGlEbbaCxhtZAG6orQF5TYAxMBUoDGqTOWmOYGKgDNiYnm9xVDO9rm7JchHXsh5OSIhMMqKB0UKcbpWNIKVonV9G_qfgpEeR3NRLltprBnm1s0j4Pr4f-B3-E-Avlyrj_8N_kL9dgcAA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2139302922</pqid></control><display><type>article</type><title>Photogating and high gain in ReS2 field-effect transistors</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Garcia, C. ; Pradhan, N. R. ; Rhodes, D. ; Balicas, L. ; McGill, S. A.</creator><creatorcontrib>Garcia, C. ; Pradhan, N. R. ; Rhodes, D. ; Balicas, L. ; McGill, S. A.</creatorcontrib><description>Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS
2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs’ threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of
∼10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be
5×104.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5050821</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Field effect transistors ; High gain ; Incident light ; Optical properties ; Photoconductivity ; Quantum efficiency ; Semiconductor devices ; Threshold voltage ; Transistors ; Transition metal compounds</subject><ispartof>Journal of applied physics, 2018-11, Vol.124 (20)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-3f4be5f8ef35741d96dcd07ed260272c4015620330d40ac01d12feedd3996df03</citedby><cites>FETCH-LOGICAL-c327t-3f4be5f8ef35741d96dcd07ed260272c4015620330d40ac01d12feedd3996df03</cites><orcidid>0000-0002-3912-4233 ; 0000-0002-5209-0293 ; 0000-0001-6365-7155</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5050821$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Garcia, C.</creatorcontrib><creatorcontrib>Pradhan, N. R.</creatorcontrib><creatorcontrib>Rhodes, D.</creatorcontrib><creatorcontrib>Balicas, L.</creatorcontrib><creatorcontrib>McGill, S. A.</creatorcontrib><title>Photogating and high gain in ReS2 field-effect transistors</title><title>Journal of applied physics</title><description>Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS
2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs’ threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of
∼10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be
5×104.</description><subject>Applied physics</subject><subject>Field effect transistors</subject><subject>High gain</subject><subject>Incident light</subject><subject>Optical properties</subject><subject>Photoconductivity</subject><subject>Quantum efficiency</subject><subject>Semiconductor devices</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Transition metal compounds</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX-w4Elh60yy2d14k-IXFBQ_ziHmY5tSNzVJBf-9Ky16EISBuTy8w7yEHCNMEGp2jhMOHFqKO2SE0Iqy4Rx2yQiAYtmKRuyTg5QWAIgtEyNy8TAPOXQq-74rVG-Kue_mRad8XwzzaJ9o4bxdmtI6Z3UuclR98imHmA7JnlPLZI-2e0xerq-ep7fl7P7mbno5KzWjTS6Zq14td611jDcVGlEbbaCxhtZAG6orQF5TYAxMBUoDGqTOWmOYGKgDNiYnm9xVDO9rm7JchHXsh5OSIhMMqKB0UKcbpWNIKVonV9G_qfgpEeR3NRLltprBnm1s0j4Pr4f-B3-E-Avlyrj_8N_kL9dgcAA</recordid><startdate>20181128</startdate><enddate>20181128</enddate><creator>Garcia, C.</creator><creator>Pradhan, N. R.</creator><creator>Rhodes, D.</creator><creator>Balicas, L.</creator><creator>McGill, S. A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3912-4233</orcidid><orcidid>https://orcid.org/0000-0002-5209-0293</orcidid><orcidid>https://orcid.org/0000-0001-6365-7155</orcidid></search><sort><creationdate>20181128</creationdate><title>Photogating and high gain in ReS2 field-effect transistors</title><author>Garcia, C. ; Pradhan, N. R. ; Rhodes, D. ; Balicas, L. ; McGill, S. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-3f4be5f8ef35741d96dcd07ed260272c4015620330d40ac01d12feedd3996df03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Field effect transistors</topic><topic>High gain</topic><topic>Incident light</topic><topic>Optical properties</topic><topic>Photoconductivity</topic><topic>Quantum efficiency</topic><topic>Semiconductor devices</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Transition metal compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Garcia, C.</creatorcontrib><creatorcontrib>Pradhan, N. R.</creatorcontrib><creatorcontrib>Rhodes, D.</creatorcontrib><creatorcontrib>Balicas, L.</creatorcontrib><creatorcontrib>McGill, S. A.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Garcia, C.</au><au>Pradhan, N. R.</au><au>Rhodes, D.</au><au>Balicas, L.</au><au>McGill, S. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photogating and high gain in ReS2 field-effect transistors</atitle><jtitle>Journal of applied physics</jtitle><date>2018-11-28</date><risdate>2018</risdate><volume>124</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS
2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs’ threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of
∼10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be
5×104.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5050821</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3912-4233</orcidid><orcidid>https://orcid.org/0000-0002-5209-0293</orcidid><orcidid>https://orcid.org/0000-0001-6365-7155</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2018-11, Vol.124 (20) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5050821 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Field effect transistors High gain Incident light Optical properties Photoconductivity Quantum efficiency Semiconductor devices Threshold voltage Transistors Transition metal compounds |
| title | Photogating and high gain in ReS2 field-effect transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T13%3A32%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photogating%20and%20high%20gain%20in%20ReS2%20field-effect%20transistors&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Garcia,%20C.&rft.date=2018-11-28&rft.volume=124&rft.issue=20&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5050821&rft_dat=%3Cproquest_scita%3E2139302922%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2139302922&rft_id=info:pmid/&rfr_iscdi=true |