Defects detection in p-n junction isolation by electroluminescence

The laser isolation of p-n junction is the origin of electrical damage in solar cells. Although several models explain this effect, it is usual to appeal to complex recombination mechanisms to get an accurate representation of their non-ideal I-V behavior. Other models give to an accurate and simple explanation of this damage introducing a connecting resistance of the defect to the rest of the solar cell structure, but its large resistance value is not well understood. This work uses electroluminescence techniques to validate the proposed model by means of finding the recombination paths from the cell volume to highly recombination defects and giving an explanation to this high value of the connection resistance from its two-dimensional behavior.