Electroforming-free resistive switching in polycrystalline YMnO3 thin films

Electroforming-free resistive switching in polycrystalline YMnO3 thin films

Polycrystalline YMnO3 thin films sandwiched between an un-patterned bottom electrode (Pt or Pt/Ti) and a circular top electrode (Au or Al) reveal an electroforming-free, unipolar resistive switching. We report YMnO3 resistive switching devices endurance depending on the bottom electrode and the top...

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Veröffentlicht in:Journal of applied physics 2018-10, Vol.124 (14)
Hauptverfasser: Rayapati, Venkata Rao, Du, Nan, Bürger, Danilo, Patra, Rajkumar, Skorupa, Ilona, Matthes, Patrick, Stöcker, Hartmut, Schulz, Stefan E., Schmidt, Heidemarie
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Electrodes
Electroforming
Endurance
High resistance
Low resistance
Platinum
Polycrystals
Switching
Thin films
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Zusammenfassung:Polycrystalline YMnO3 thin films sandwiched between an un-patterned bottom electrode (Pt or Pt/Ti) and a circular top electrode (Au or Al) reveal an electroforming-free, unipolar resistive switching. We report YMnO3 resistive switching devices endurance depending on the bottom electrode and the top electrode. The number of loading cycles of the Al/YMnO3/Pt resistive switch is larger than 103. The resistance ratio between the high resistance (OFF) and the low resistance (ON) state is larger than 104, which can be further increased to 105 by decreasing the diameter of the Al top electrode.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5040041