Effect of doping on all TMC vertical heterointerfaces

The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kÅ thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung’s method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.