Physical properties of nanostructured CeO2 thin films grown by SILAR method

Physical properties of nanostructured CeO2 thin films grown by SILAR method

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray...

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Hauptverfasser: Khan, Ishaque Ahmed, Belkhedkar, M. R., Salodkar, R. V., Ubale, A. U.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5032437