Hybrid 2D/3D MoS2/GaN heterostructures for dual functional photoresponse

Recently, mixed-dimensional p-n heterojunctions have shown desirable optoelectronic functionalities. However, relatively little is known about the influence of interfacial traps on electron transport under external bias. Here, we explore the prominent dual optoelectronic characteristics of n-MoS2/p-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2018-06, Vol.112 (23)
Hauptverfasser: Huang, Chun-Ying, Chang, Cheng, Lu, Guan-Zhang, Huang, Wen-Chun, Huang, Chun-Sheng, Chen, Ming-Liang, Lin, Tzu-Neng, Shen, Ji-Lin, Lin, Tai-Yuan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Recently, mixed-dimensional p-n heterojunctions have shown desirable optoelectronic functionalities. However, relatively little is known about the influence of interfacial traps on electron transport under external bias. Here, we explore the prominent dual optoelectronic characteristics of n-MoS2/p-GaN heterostructures, including photodetection and persistent photocurrent (PPC). The photoresponsivity was found to achieve as high as ∼105 A W−1 for 532 nm laser illumination under reverse bias. Additionally, the device exhibits the long-lasting PPC with a decay time constant (460 s) under forward bias. The results indicate that the hybrid heterojunctions not only function as high performance photodetectors under reverse bias but also have potential to use the unique property of PPC for other optoelectronic applications under forward bias alternatively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5030537