Determining the confined optical length of high index vertical Si nanoforest arrays for photonic applications

The structural and the optical properties of different Si nanostructures have been compared. Detailed optical properties of Si nanowires arrays of different optical lengths, fabricated by facile electroless etching technique, have been reported. The theoretical calculation of exponential sine profile at constant λ = 600 nm shows a better explanation in terms of gradient index with optical length for vertical nanowires. The observations signify the possibility of strong light trapping due to an exponential gradient towards the high index along the nanowires and the existence of dense subwavelength features. The optical admittance (Ƶ) shows a strong impact on optical distance (Z) for Z