Silicon quantum dots for energetic material applications
In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s−1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon...
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Veröffentlicht in: | Applied physics letters 2018-06, Vol.112 (23) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s−1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon's typical substrate-adhered form and caustic chemical processing requirements that limit how and when porous silicon is made. In this work, we have relieved porous silicon of these constraints by creating reactive silicon quantum dots from free-standing porous silicon films. The resulting material is composed of crystalline silicon nanoparticles with diameters as small as 2 nm that retain the chemical properties of the original films including the SiH2 termination layer. The fabricated silicon particles were characterized using FTIR Spectroscopy, TEM, and EDS for determining the size and the chemical composition. For testing as an energetic material fuel, porous silicon was mixed with an oft used oxidizer, sodium perchlorate. During open-channel combustion tests, silicon quantum dots mixed with sodium perchlorate demonstrated flame speeds over 2.5 km s−1, while bomb calorimetry tests showed an average heat of combustion of 7.4 kJ g−1. These results demonstrate the ability to retain the porous silicon material properties that allow for highly energetic material reactions to occur, despite the additional processing steps to create silicon quantum dots. This opens the door for the use of porous silicon in the bulk of the energetic material application space, much of which was previously limited due to the substrate-attached nature of typical porous silicon. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5022587 |