Radiative decay rates in Si crystallites with a donor ion

Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ∼1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increa...

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Veröffentlicht in:Journal of applied physics 2018-04, Vol.123 (16)
Hauptverfasser: Derbenyova, Natalia V., Burdov, Vladimir A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ∼1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increasing temperature was revealed for the crystallites with the lithium ion. No temperature effect was found for the crystallites with the ion of P. It was also shown that the presence of ionized donors in Si crystallites can substantially accelerate the radiative decay compared to the case of pure crystallites.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5011382