Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice o...

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Veröffentlicht in:Journal of applied physics 2018-04, Vol.123 (16), p.161418-161418
Hauptverfasser: Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitry A., Lazarenko, Alexandra A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Pirogov, Evgeny V., Sobolev, Maxim S., Zelentsov, Kirill S., Egorov, Anton Yu, Darga, Arouna, Le Gall, Sylvain, Kleider, Jean-Paul
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Electric power
Engineering Sciences
Materials Science
Physics
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Zusammenfassung:The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5011371