Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films
The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 °C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric forc...
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Veröffentlicht in: | Applied physics letters 2018-02, Vol.112 (9) |
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description | The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 °C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric force microscopy. Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measured by sustained performance after 1010 bipolar switching cycles. The enhanced device features are attributed to the transition to the orthorhombic-phase from the tetragonal-phase of Hf0.5Zr0.5O2 at high pressure, which is also consistent with the results of “wake-up” analysis, and the variations of the pure polarization curves, extracted from the total displacement field under pressure. |
doi_str_mv | 10.1063/1.5003369 |
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Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measured by sustained performance after 1010 bipolar switching cycles. The enhanced device features are attributed to the transition to the orthorhombic-phase from the tetragonal-phase of Hf0.5Zr0.5O2 at high pressure, which is also consistent with the results of “wake-up” analysis, and the variations of the pure polarization curves, extracted from the total displacement field under pressure.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5003369</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><ispartof>Applied physics letters, 2018-02, Vol.112 (9)</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-9eee63610a3729a2e82290edc5971cedfa6a5c83ccb8ff00e1f4354084f97eac3</citedby><cites>FETCH-LOGICAL-c365t-9eee63610a3729a2e82290edc5971cedfa6a5c83ccb8ff00e1f4354084f97eac3</cites><orcidid>0000-0002-4222-1587 ; 0000-0002-0276-3883</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5003369$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Kim, Taeho</creatorcontrib><creatorcontrib>Park, Jinsung</creatorcontrib><creatorcontrib>Cheong, Byoung-Ho</creatorcontrib><creatorcontrib>Jeon, Sanghun</creatorcontrib><title>Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films</title><title>Applied physics letters</title><description>The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 °C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric force microscopy. Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measured by sustained performance after 1010 bipolar switching cycles. 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Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measured by sustained performance after 1010 bipolar switching cycles. The enhanced device features are attributed to the transition to the orthorhombic-phase from the tetragonal-phase of Hf0.5Zr0.5O2 at high pressure, which is also consistent with the results of “wake-up” analysis, and the variations of the pure polarization curves, extracted from the total displacement field under pressure.</abstract><doi>10.1063/1.5003369</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4222-1587</orcidid><orcidid>https://orcid.org/0000-0002-0276-3883</orcidid></addata></record> |
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title | Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films |
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