Oxygen-assisted synthesis of hexagonal boron nitride films for graphene transistors
We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube a...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2017-11, Vol.111 (20) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube and heated up in a water bath without the carrier-gas flow. These films are characterized by using SEM, Raman, XPS, and selected area electron diffraction analyses. As dielectric substrates, h-BN films significantly enhance the charge-carrier mobility of graphene transistors. This facile and robust method can be a scalable approach to synthesize large-area high-quality h-BN films for related electronic applications. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5001790 |