Oxygen-assisted synthesis of hexagonal boron nitride films for graphene transistors

We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube a...

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Veröffentlicht in:Applied physics letters 2017-11, Vol.111 (20)
Hauptverfasser: Zhuang, Pingping, Lin, Weiyi, Xu, Binbin, Cai, Weiwei
Format: Artikel
Sprache:eng
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Zusammenfassung:We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube and heated up in a water bath without the carrier-gas flow. These films are characterized by using SEM, Raman, XPS, and selected area electron diffraction analyses. As dielectric substrates, h-BN films significantly enhance the charge-carrier mobility of graphene transistors. This facile and robust method can be a scalable approach to synthesize large-area high-quality h-BN films for related electronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5001790