Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1- y Sn y and Ge1- x Si x cases

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1- y Sn y and Ge1- x Si x cases

The compositional dependence of the lattice parameter in Ge1- y Sn y alloys has been determined from combined X-ray diffraction and Rutherford Backscattering (RBS) measurements of a large set of epitaxial films with compositions in the 0 

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Veröffentlicht in:Journal of applied physics 2017-09, Vol.122 (12)
Hauptverfasser: Xu, Chi, Senaratne, Charutha L., Culbertson, Robert J., Kouvetakis, John, Menéndez, José
Format: Artikel
Sprache:eng
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Zusammenfassung:The compositional dependence of the lattice parameter in Ge1- y Sn y alloys has been determined from combined X-ray diffraction and Rutherford Backscattering (RBS) measurements of a large set of epitaxial films with compositions in the 0 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4996306