Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell
Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell s...
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| creator | Gunawan Haris, Abdul Widodo, Didik Setiyo Septina, Wilman Ikeda, Shigeru |
| description | Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of −0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film. |
| doi_str_mv | 10.1063/1.4995091 |
| format | Conference Proceeding |
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Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of −0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4995091</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Abundance ; Annealing ; Chalcogenides ; Copper ; Copper zinc tin selenide ; Earth crust ; Electrodeposition ; Optoelectronic devices ; Photovoltaic cells ; Precursors ; Selenium ; Silicon wafers ; Silver chloride ; Solar cells ; Thin films ; Tin</subject><ispartof>AIP conference proceedings, 2017, Vol.1868 (1)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of −0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film.</description><subject>Abundance</subject><subject>Annealing</subject><subject>Chalcogenides</subject><subject>Copper</subject><subject>Copper zinc tin selenide</subject><subject>Earth crust</subject><subject>Electrodeposition</subject><subject>Optoelectronic devices</subject><subject>Photovoltaic cells</subject><subject>Precursors</subject><subject>Selenium</subject><subject>Silicon wafers</subject><subject>Silver chloride</subject><subject>Solar cells</subject><subject>Thin films</subject><subject>Tin</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2017</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kUtLAzEUhYMoWKsL_0HAnTA1N5lJJkspPgoFF1UQNyHNJJoynYzJTKX_3ukD3Lm6cPnOuZxzEboGMgHC2R1McikLIuEEjaAoIBMc-CkaESLzjObs_RxdpLQihEohyhH6mTUbmzr_qTsfGhwcnvZ00Swsw220rY6H_XKLk1_3dacbG_qEbW1NF0Nl25D8ntBpJzB9TCEebT6anVGOuy_fYOfrNU6h1hEbW9eX6MzpOtmr4xyjt8eH1-lzNn95mk3v55lhtOwyYQgry4rK3BhBckKEgIprZrjQVjhRSK45c9pQC1BaRh2j1FgpZGVKtqzYGN0cfNsYvvshqVqFPjbDSUUBOBE5hWKgbg9UMr7bJ1Zt9Gsdt2oTogJ1LFW1lfsPBqJ2X_gTsF_d63qP</recordid><startdate>20170804</startdate><enddate>20170804</enddate><creator>Gunawan</creator><creator>Haris, Abdul</creator><creator>Widodo, Didik Setiyo</creator><creator>Septina, Wilman</creator><creator>Ikeda, Shigeru</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20170804</creationdate><title>Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell</title><author>Gunawan ; Haris, Abdul ; Widodo, Didik Setiyo ; Septina, Wilman ; Ikeda, Shigeru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-7c0388d294cc70400771d6a3c67ae7f7596a63fac2e118e32f322ce979dc83bd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Abundance</topic><topic>Annealing</topic><topic>Chalcogenides</topic><topic>Copper</topic><topic>Copper zinc tin selenide</topic><topic>Earth crust</topic><topic>Electrodeposition</topic><topic>Optoelectronic devices</topic><topic>Photovoltaic cells</topic><topic>Precursors</topic><topic>Selenium</topic><topic>Silicon wafers</topic><topic>Silver chloride</topic><topic>Solar cells</topic><topic>Thin films</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gunawan</creatorcontrib><creatorcontrib>Haris, Abdul</creatorcontrib><creatorcontrib>Widodo, Didik Setiyo</creatorcontrib><creatorcontrib>Septina, Wilman</creatorcontrib><creatorcontrib>Ikeda, Shigeru</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gunawan</au><au>Haris, Abdul</au><au>Widodo, Didik Setiyo</au><au>Septina, Wilman</au><au>Ikeda, Shigeru</au><au>Kusumawardani, Cahyorini</au><au>Wilujeng, Insih</au><au>Abadi, Agus Maman</au><au>Suyanto, Slamet</au><au>Warsono</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell</atitle><btitle>AIP conference proceedings</btitle><date>2017-08-04</date><risdate>2017</risdate><volume>1868</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of −0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4995091</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2017, Vol.1868 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4995091 |
| source | American Institute of Physics (AIP) Journals |
| subjects | Abundance Annealing Chalcogenides Copper Copper zinc tin selenide Earth crust Electrodeposition Optoelectronic devices Photovoltaic cells Precursors Selenium Silicon wafers Silver chloride Solar cells Thin films Tin |
| title | Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell |
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