Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was obser...

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Veröffentlicht in:AIP advances 2017-06, Vol.7 (6), p.065121-065121-6
Hauptverfasser: Liu, Lan, Wang, Xudong, Han, Li, Tian, Bobo, Chen, Yan, Wu, Guangjian, Li, Dan, Yan, Mengge, Wang, Tao, Sun, Shuo, Shen, Hong, Lin, Tie, Sun, Jinglan, Duan, Chungang, Wang, Jianlu, Meng, Xiangjian, Chu, Junhao
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Sprache:eng
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Zusammenfassung:The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105).
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4991843