Intra-domain periodic defects in monolayer MoS2

We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other int...

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Veröffentlicht in:Applied physics letters 2017-05, Vol.110 (20)
Hauptverfasser: Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.
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Sprache:eng
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Zusammenfassung:We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4983789