Intra-domain periodic defects in monolayer MoS2
We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other int...
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Veröffentlicht in: | Applied physics letters 2017-05, Vol.110 (20) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4983789 |