Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping
The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb x Ti1- x O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly condu...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2017-05, Vol.110 (18) |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 18 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 110 |
| creator | Jing, Xiaosai Xu, Wenchao Yang, Cheng Feng, Jiajun Zhang, Aihua Zeng, Yanping Qin, Minghui Zeng, Min Fan, Zhen Gao, Jinwei Gao, Xingsen Zhou, Guofu Lu, Xubing Liu, J.-M. |
| description | The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb
x
Ti1-
x
O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 105. For x ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x ≤ 0.25) deposited in the presence of a small amount of oxygen (3 × 10−3 Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices. |
| doi_str_mv | 10.1063/1.4982655 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4982655</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c365t-d1c4fe998460c6da99474ef449e91c45faedf3095ad3e79d5a234550620cc5c33</originalsourceid><addsrcrecordid>eNqdkEtLAzEUhYMoWKsL_0G2Sqcmk8c0Sy2-oNhNXQ9pHjUyTYYkLc6_N9KKe1eXy_3uueceAK4xmmLEyR2eUjGrOWMnYIRR01QE49kpGCGESMUFw-fgIqXP0rKakBHYrnbe-Q00nVE5OiU7qILXO5Xd3uVhAtWHjBsDc5Q-9SHmCZReQ2tiDL87hYPOQ9O7LL9cUXiQK7ck0Lpum-B6gG_rSoe-nLkEZ1Z2yVwd6xi8Pz2u5i_VYvn8Or9fVIpwliuNFbVGiBnlSHEthaANNZZSYUQZMSuNtgQJJjUxjdBM1oQyhniNlGKKkDG4OeiqGFKKxrZ9dFsZhxaj9ienFrfHnAp7e2BTeURmF_z_4H2If2DbF4PfrIt4Lw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping</title><source>美国小型学会期刊集（AIP Scitation平台）</source><source>Alma/SFX Local Collection</source><creator>Jing, Xiaosai ; Xu, Wenchao ; Yang, Cheng ; Feng, Jiajun ; Zhang, Aihua ; Zeng, Yanping ; Qin, Minghui ; Zeng, Min ; Fan, Zhen ; Gao, Jinwei ; Gao, Xingsen ; Zhou, Guofu ; Lu, Xubing ; Liu, J.-M.</creator><creatorcontrib>Jing, Xiaosai ; Xu, Wenchao ; Yang, Cheng ; Feng, Jiajun ; Zhang, Aihua ; Zeng, Yanping ; Qin, Minghui ; Zeng, Min ; Fan, Zhen ; Gao, Jinwei ; Gao, Xingsen ; Zhou, Guofu ; Lu, Xubing ; Liu, J.-M.</creatorcontrib><description>The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb
x
Ti1-
x
O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 105. For x ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x ≤ 0.25) deposited in the presence of a small amount of oxygen (3 × 10−3 Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4982655</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><ispartof>Applied physics letters, 2017-05, Vol.110 (18)</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-d1c4fe998460c6da99474ef449e91c45faedf3095ad3e79d5a234550620cc5c33</citedby><cites>FETCH-LOGICAL-c365t-d1c4fe998460c6da99474ef449e91c45faedf3095ad3e79d5a234550620cc5c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4982655$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Jing, Xiaosai</creatorcontrib><creatorcontrib>Xu, Wenchao</creatorcontrib><creatorcontrib>Yang, Cheng</creatorcontrib><creatorcontrib>Feng, Jiajun</creatorcontrib><creatorcontrib>Zhang, Aihua</creatorcontrib><creatorcontrib>Zeng, Yanping</creatorcontrib><creatorcontrib>Qin, Minghui</creatorcontrib><creatorcontrib>Zeng, Min</creatorcontrib><creatorcontrib>Fan, Zhen</creatorcontrib><creatorcontrib>Gao, Jinwei</creatorcontrib><creatorcontrib>Gao, Xingsen</creatorcontrib><creatorcontrib>Zhou, Guofu</creatorcontrib><creatorcontrib>Lu, Xubing</creatorcontrib><creatorcontrib>Liu, J.-M.</creatorcontrib><title>Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping</title><title>Applied physics letters</title><description>The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb
x
Ti1-
x
O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 105. For x ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x ≤ 0.25) deposited in the presence of a small amount of oxygen (3 × 10−3 Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkEtLAzEUhYMoWKsL_0G2Sqcmk8c0Sy2-oNhNXQ9pHjUyTYYkLc6_N9KKe1eXy_3uueceAK4xmmLEyR2eUjGrOWMnYIRR01QE49kpGCGESMUFw-fgIqXP0rKakBHYrnbe-Q00nVE5OiU7qILXO5Xd3uVhAtWHjBsDc5Q-9SHmCZReQ2tiDL87hYPOQ9O7LL9cUXiQK7ck0Lpum-B6gG_rSoe-nLkEZ1Z2yVwd6xi8Pz2u5i_VYvn8Or9fVIpwliuNFbVGiBnlSHEthaANNZZSYUQZMSuNtgQJJjUxjdBM1oQyhniNlGKKkDG4OeiqGFKKxrZ9dFsZhxaj9ienFrfHnAp7e2BTeURmF_z_4H2If2DbF4PfrIt4Lw</recordid><startdate>20170501</startdate><enddate>20170501</enddate><creator>Jing, Xiaosai</creator><creator>Xu, Wenchao</creator><creator>Yang, Cheng</creator><creator>Feng, Jiajun</creator><creator>Zhang, Aihua</creator><creator>Zeng, Yanping</creator><creator>Qin, Minghui</creator><creator>Zeng, Min</creator><creator>Fan, Zhen</creator><creator>Gao, Jinwei</creator><creator>Gao, Xingsen</creator><creator>Zhou, Guofu</creator><creator>Lu, Xubing</creator><creator>Liu, J.-M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170501</creationdate><title>Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping</title><author>Jing, Xiaosai ; Xu, Wenchao ; Yang, Cheng ; Feng, Jiajun ; Zhang, Aihua ; Zeng, Yanping ; Qin, Minghui ; Zeng, Min ; Fan, Zhen ; Gao, Jinwei ; Gao, Xingsen ; Zhou, Guofu ; Lu, Xubing ; Liu, J.-M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-d1c4fe998460c6da99474ef449e91c45faedf3095ad3e79d5a234550620cc5c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jing, Xiaosai</creatorcontrib><creatorcontrib>Xu, Wenchao</creatorcontrib><creatorcontrib>Yang, Cheng</creatorcontrib><creatorcontrib>Feng, Jiajun</creatorcontrib><creatorcontrib>Zhang, Aihua</creatorcontrib><creatorcontrib>Zeng, Yanping</creatorcontrib><creatorcontrib>Qin, Minghui</creatorcontrib><creatorcontrib>Zeng, Min</creatorcontrib><creatorcontrib>Fan, Zhen</creatorcontrib><creatorcontrib>Gao, Jinwei</creatorcontrib><creatorcontrib>Gao, Xingsen</creatorcontrib><creatorcontrib>Zhou, Guofu</creatorcontrib><creatorcontrib>Lu, Xubing</creatorcontrib><creatorcontrib>Liu, J.-M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jing, Xiaosai</au><au>Xu, Wenchao</au><au>Yang, Cheng</au><au>Feng, Jiajun</au><au>Zhang, Aihua</au><au>Zeng, Yanping</au><au>Qin, Minghui</au><au>Zeng, Min</au><au>Fan, Zhen</au><au>Gao, Jinwei</au><au>Gao, Xingsen</au><au>Zhou, Guofu</au><au>Lu, Xubing</au><au>Liu, J.-M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping</atitle><jtitle>Applied physics letters</jtitle><date>2017-05-01</date><risdate>2017</risdate><volume>110</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb
x
Ti1-
x
O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 105. For x ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x ≤ 0.25) deposited in the presence of a small amount of oxygen (3 × 10−3 Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices.</abstract><doi>10.1063/1.4982655</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2017-05, Vol.110 (18) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4982655 |
| source | 美国小型学会期刊集（AIP Scitation平台）; Alma/SFX Local Collection |
| title | Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T15%3A31%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20electrical%20conductivity,%20charge%20transport,%20and%20ferroelectricity%20in%20epitaxial%20BaTiO3%20films%20by%20Nb-doping&rft.jtitle=Applied%20physics%20letters&rft.au=Jing,%20Xiaosai&rft.date=2017-05-01&rft.volume=110&rft.issue=18&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.4982655&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |