Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping

The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb x Ti1- x O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly condu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2017-05, Vol.110 (18)
Hauptverfasser: Jing, Xiaosai, Xu, Wenchao, Yang, Cheng, Feng, Jiajun, Zhang, Aihua, Zeng, Yanping, Qin, Minghui, Zeng, Min, Fan, Zhen, Gao, Jinwei, Gao, Xingsen, Zhou, Guofu, Lu, Xubing, Liu, J.-M.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNb x Ti1- x O3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulating BaTiO3 films from an insulating to highly conductive semiconducting or metallic state, resulting in a variation of the electrical conductivity of the BNTO films over 105. For x ≤ 0.25, the charge transport is dominated by the small polaron hopping mechanism, while the charge transport for x = 0.5 transits from the bipolaron to the small-polaron, and then the thermal phonon scattering mechanisms with increasing temperature. Interestingly, the piezo-force microscopy imaging reveals the presence of ferroelectricity in the properly Nb-doped conductive BNTO films (x ≤ 0.25) deposited in the presence of a small amount of oxygen (3 × 10−3 Pa). Our work provides additional technical roadmaps to manipulate the conductivity and charge transport behaviors in ferroelectric films, which will boost potential applications in future information storage, sensors, and photovoltaic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4982655