Half-Metallic ferromagnetism in V-doped AlP: An imperative compound for spintronics

A supercell approach has been used to performed the ground state calculations of Al1-xVxP (x=0.03) Diluted Magnetic Semiconductor (DMS) compound using full potential linearzed augmented plane wave (FPLAPW) method based on density functional theory (DFT). The calculated properties of bulk InP compound get modified significantly due to the substitution of V-dopant at the cation (Al) site. The new states are produced at EF which accounts for the magnetism on the doping. In V-doped AlP, the hybridization of P-p states with V-d states introduces a gap in minority spin channel with 100% spin polarization at EF. The V-doping in AlP induces a net magnetic moment of ∼2.0 μB which shows an important role played by V-d states in total magnetic moment. The HMF characteristics of V-doped AlP makes it an ideal material for spintronic devices.