Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromag...
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Veröffentlicht in: | Applied physics letters 2017-03, Vol.110 (12) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present a study of the magnetic dynamics associated with nanosecond scale magnetic
switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions
(MTJs) with
in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and
detailed micromagnetic
simulations, we demonstrate that this unexpectedly fast and reliable
magnetic reversal is facilitated by the self-generated Oersted field, and that the
short-pulse energy
efficiency can be substantially enhanced by spatial non-uniformity in
the initial magnetization of the magnetic free layer. The sign of the Oersted field is
essential for this enhancement—in simulations in which we artificially impose a field-like
torque with a
sign opposite to the effect of the Oersted field, the result is a much slower and
stochastic switching process that is reminiscent of the so-called incubation delay in
conventional 2-terminal spin-torque-switched MTJs. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4978661 |