On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study

In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum t...

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Veröffentlicht in:Journal of applied physics 2017-01, Vol.121 (4)
Hauptverfasser: Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Luisier, Mathieu, Radu, Iuliana P., Houssa, Michel
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Sprache:eng
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Zusammenfassung:In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4974960