Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

We developed a method of forming single-crystalline germanium-tin (GeSn) alloy on transparent substrates that is based on liquid-phase crystallization. By controlling and designing nucleation during the melting growth process, a highly tensile-strained single-crystalline GeSn layer was grown on a qu...

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Veröffentlicht in:Applied physics letters 2017-01, Vol.110 (3)
Hauptverfasser: Oka, Hiroshi, Amamoto, Takashi, Koyama, Masahiro, Imai, Yasuhiko, Kimura, Shigeru, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
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Sprache:eng
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Zusammenfassung:We developed a method of forming single-crystalline germanium-tin (GeSn) alloy on transparent substrates that is based on liquid-phase crystallization. By controlling and designing nucleation during the melting growth process, a highly tensile-strained single-crystalline GeSn layer was grown on a quartz substrate without using any crystal-seeds or catalysts. The peak field-effect hole mobility of 423 cm2/V s was obtained for a top-gate single-crystalline GeSn MOSFET on a quartz substrate with a Sn content of 2.6%, indicating excellent crystal quality and mobility enhancement due to Sn incorporation and tensile strain.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4974473