Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperat...

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Veröffentlicht in:Applied physics letters 2017-01, Vol.110 (1)
Hauptverfasser: Troughton, J. G., Downs, P., Price, R., Atkinson, D.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied physics
Densification
Density
Electronics
Flat panel displays
Flexible components
Indium gallium zinc oxide
Low temperature
Semiconductor devices
Substrates
Temperature
Thin film transistors
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Zusammenfassung:Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4973629