Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric...
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Veröffentlicht in: | Applied physics letters 2017-01, Vol.110 (1) |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature in WS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4973519 |