Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric...

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Veröffentlicht in:Applied physics letters 2017-01, Vol.110 (1)
Hauptverfasser: Dau, M. T., Vergnaud, C., Marty, A., Rortais, F., Beigné, C., Boukari, H., Bellet-Amalric, E., Guigoz, V., Renault, O., Alvarez, C., Okuno, H., Pochet, P., Jamet, M.
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Sprache:eng
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Zusammenfassung:Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature in WS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4973519