Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1−yN (0

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2016-09, Vol.120 (11)
Hauptverfasser:	Kimura, Shigeya, Yoshida, Hisashi, Uesugi, Kenjiro, Ito, Toshihide, Okada, Aoi, Nunoue, Shinya
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Aluminum nitride Applied physics Atom probe analysis Carrier transport Computer simulation Current density Electroluminescence Gallium nitrides Indium gallium nitrides Interlayers Light emitting diodes Multi Quantum Wells Organic light emitting diodes Performance enhancement Quantum efficiency Shrinkage Silicon substrates Temperature dependence Three dimensional analysis Transmission electron microscopy
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Beschreibung
Zusammenfassung:	We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1−yN (0
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.4962719