Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially sup...

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Veröffentlicht in:Applied physics letters 2016-09, Vol.109 (10)
Hauptverfasser: Sala, E. M., Stracke, G., Selve, S., Niermann, T., Lehmann, M., Schlichting, S., Nippert, F., Callsen, G., Strittmatter, A., Bimberg, D.
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Sprache:eng
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Antimony
Applied physics
Deposition
Gallium phosphides
Interlayers
Metalorganic chemical vapor deposition
Quantum dots
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container_issue 10
container_start_page
container_title Applied physics letters
container_volume 109
creator Sala, E. M.
Stracke, G.
Selve, S.
Niermann, T.
Lehmann, M.
Schlichting, S.
Nippert, F.
Callsen, G.
Strittmatter, A.
Bimberg, D.
description Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
doi_str_mv 10.1063/1.4962273
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source American Institute of Physics (AIP) Journals; Alma/SFX Local Collection
subjects Antimony
Applied physics
Deposition
Gallium phosphides
Interlayers
Metalorganic chemical vapor deposition
Quantum dots
title Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)
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