Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially sup...

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Veröffentlicht in:Applied physics letters 2016-09, Vol.109 (10)
Hauptverfasser: Sala, E. M., Stracke, G., Selve, S., Niermann, T., Lehmann, M., Schlichting, S., Nippert, F., Callsen, G., Strittmatter, A., Bimberg, D.
Format: Artikel
Sprache:eng
Schlagworte:
Antimony
Applied physics
Deposition
Gallium phosphides
Interlayers
Metalorganic chemical vapor deposition
Quantum dots
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Zusammenfassung:Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4962273