On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film

On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film

Mg2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7...

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Veröffentlicht in:Applied physics letters 2016-07, Vol.109 (4)
Hauptverfasser: Chernev, I. M., Shevlyagin, A. V., Galkin, K. N., Stuchlik, J., Remes, Z., Fajgar, R., Galkin, N. G.
Format: Artikel
Sprache:eng
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Zusammenfassung:Mg2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg2Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg2Si.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4960011