InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightwe...

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Veröffentlicht in:Applied physics letters 2016-07, Vol.109 (3)
Hauptverfasser: Lye, Khe Shin, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi
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Sprache:eng
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Zusammenfassung:Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4959777