Visible light absorbance enhanced by nitrogen embedded in the surface layer of Mn-doped sodium niobate crystals, detected by ultra violet - visible spectroscopy, x-ray photoelectron spectroscopy, and electric conductivity tests
Sodium niobate crystals doped with manganese ions, Na(NbMn)O3, were annealed in a nitrogen N2 flow at 600, 670, and 930 K. It was verified that simultaneous doping with Mn ions and annealing in nitrogen enhanced the photocatalytic features of sodium niobate. The transmission in the ultraviolet-visib...
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Veröffentlicht in: | Journal of applied physics 2016-05, Vol.119 (20) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Sodium niobate crystals doped with manganese ions, Na(NbMn)O3, were annealed in a nitrogen N2 flow at 600, 670, and 930 K. It was verified that simultaneous doping with Mn ions and annealing in nitrogen enhanced the photocatalytic features of sodium niobate. The transmission in the ultraviolet-visible range was measured at room temperature. The absorbance edge is in the range from 3.4 to 2.3 eV. The optical band gap E
gap = 1.2–1.3 eV was evaluated using the Tauc relation. Crystals annealed at 670 K and 930 K exhibited an additional shift of the absorption edge of ∼20–40 nm toward longer wavelengths. The optical energy gap narrowed as a result of the superimposed effect of Mn and N co-doping. The x-ray photoelectron spectroscopy test showed that N ions incorporated into the surface layer. The valence band consisted of O 2p states hybridized with Nb 4d, Mn 3d, and N 2s states. The disorder detected in the surroundings of Nb and O ions decreased due to annealing. The binding energy of oxygen ions situated within the surface layer was E
B ≈ 531 eV. The other contributions were assigned to molecular contamination. The contribution centered at 535.5 eV vanished after annealing at 600 K and 670 K. The contribution centered at 534 eV vanished after annealing at 930 K. The N2 annealing partly removed carbonates from the surfaces of the samples. In the 480–950 K range, the electric conductivity activation energy, E
a = 0.7–1.2 eV, was comparable with the optical E
gap. The electric permittivity showed dispersion in the 0.1–800 kHz range that corresponds to the occurrence of defects. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4948937 |