Size effects in near-ultraviolet Raman spectra of few-nanometer-thick silicon-on-insulator nanofilms

Size effects in near-ultraviolet Raman spectra of few-nanometer-thick silicon-on-insulator nanofilms

We have fabricated Si-on-insulator (SOI) layers with a thickness h1 of a few nanometers and examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and electron confinement play important roles in SOI with h1  

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Veröffentlicht in:Journal of applied physics 2016-04, Vol.119 (15)
Hauptverfasser: Poborchii, Vladimir, Morita, Yukinori, Tada, Tetsuya, Geshev, Pavel I., Utegulov, Zhandos N., Volkov, Alexey
Format: Artikel
Sprache:eng
Schlagworte:
Acoustic resonance
Applied physics
Bands
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFINEMENT
ELECTRONS
Enlargement
EXCITATION
INHIBITION
LAYERS
PHONONS
RAMAN EFFECT
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RESONANCE
Resonance scattering
SCATTERING
SILICON
Size effects
Spectrum analysis
Superposition (mathematics)
THICKNESS
ULTRAVIOLET RADIATION
Ultraviolet spectra
VECTORS
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Beschreibung
Zusammenfassung:We have fabricated Si-on-insulator (SOI) layers with a thickness h1 of a few nanometers and examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and electron confinement play important roles in SOI with h1  
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4947021