Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged sp...

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Veröffentlicht in:	Applied physics letters 2016-03, Vol.119 (11)
Hauptverfasser:	Chen, S. L., Kiba, T., Yang, X. J., Takayama, J., Murayama, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Electron spin ELECTRONS EXCITED STATES Gallium arsenide GALLIUM ARSENIDES High temperature INDIUM ARSENIDES Indium gallium arsenides INJECTION MULTIPLE SCATTERING Nanostructure PHONONS QUANTUM DOTS QUANTUM WELLS RELAXATION SPIN Spin dynamics SPIN ORIENTATION TEMPERATURE DEPENDENCE Thermal stability TIME RESOLUTION VELOCITY
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