Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures
Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged sp...
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Veröffentlicht in: | Applied physics letters 2016-03, Vol.119 (11) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field. |
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ISSN: | 0021-8979 0003-6951 1077-3118 1089-7550 |
DOI: | 10.1063/1.4944039 |