Sidewall depletion in nano-patterned LAO/STO heterostructures

Sidewall depletion in nano-patterned LAO/STO heterostructures

We have investigated the conductance of nanostructures fabricated from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO3/ SrTiO3 (LAO/STO) interface. Measurements were done at room temperature and at T=4.2 K. Our findings show that the fully industry compatible nano-patterning proc...

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Veröffentlicht in:AIP advances 2016-03, Vol.6 (3), p.035002-035002-7
Hauptverfasser: Minhas, M. Z., Blaschek, H. H., Heyroth, F., Schmidt, G.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
Depletion
ELECTRIC CONDUCTIVITY
ELECTRON GAS
ELECTRONS
Heterostructures
INTERFACES
LANTHANUM COMPOUNDS
LAYERS
NANOSTRUCTURES
Resistance
STRONTIUM TITANATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0273-0400 K
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
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Beschreibung
Zusammenfassung:We have investigated the conductance of nanostructures fabricated from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO3/ SrTiO3 (LAO/STO) interface. Measurements were done at room temperature and at T=4.2 K. Our findings show that the fully industry compatible nano-patterning process conserves the conductivity except for a small temperature dependent sidewall depletion which we attribute to etch damage induced by the dry etching process.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4943401