Visible and near-infrared electroluminescence from TiO2/p +-Si heterostructured device

We report on visible and near-infrared (NIR) electroluminescence (EL) from the device based on the TiO2/p +-Si heterostructure, in which the TiO2 film is composed of anatase and rutile phases. As the device is applied with sufficiently high forward bias with the positive voltage connecting to p +-Si, the visible EL peaking at ∼600 nm along with the NIR EL centered at ∼810 nm occur simultaneously. It is proposed that the oxygen vacancies in the anatase TiO2 and Ti3+ defect states in the rutile TiO2 are the responsible centers for the visible and NIR EL, respectively.