Microwave annealing

Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Co...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Yao-Jen, Cho, T.-C., Chuang, S.-S., Hsueh, F.-K., Lu, Y.-L., Sung, P.-J., Chen, S.-J., Lo, C.-H., Lai, C.-H., Current, Michael I., Tseng, T.-Y., Chao, T.-S., Yang, F.-L.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, 31P, and BF 2 implants in Si substrate were annealed by MWA at temperatures below 550 °C.
ISSN:	0094-243X 1551-7616
DOI:	10.1063/1.4766505