Single photon emission from InGaN/GaN quantum dots up to 50K

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence ( μ PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50K is demonstrated.