Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2011-11, Vol.110 (10)
Hauptverfasser: Xu, Zhongguang, Huo, Zongliang, Zhu, Chenxin, Cui, Yanxiang, Wang, Ming, Zheng, Zhiwei, Liu, Jing, Wang, Yumei, Li, Fanghua, Liu, Ming
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 °C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3662944