Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications
In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2011-11, Vol.110 (10) |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 °C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3662944 |