Reconstruction dependent reactivity of As-decapped In 0.53 Ga 0.47 As(001) surfaces and its influence on the electrical quality of the interface with Al 2 O 3 grown by atomic layer deposition

Tuning the desorption temperature of an As cap layer allows to achieve In 0.53 Ga 0.47 As(001) surfaces with (2×4) and (4×2) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al 2 O 3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (4×2) In 0.53 Ga 0.47 As reconstruction.