Enhanced photovoltaic properties in graphene/polycrystalline BiFeO 3 /Pt heterojunction structure

We report the enhanced photovoltaic properties in polycrystalline BiFeO 3 (BFO) thin films with graphene as top electrodes. The short circuit current density ( J sc ) and open circuit voltage of the heterojunction are measured to be 25 μ A/cm 2 and 0.44V, respectively, much higher than the reported...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2011-09, Vol.99 (13), p.132904-132904-3
Hauptverfasser: Zang, Yongyuan, Xie, Dan, Wu, Xiao, Chen, Yu, Lin, Yuxuan, Li, Mohan, Tian, He, Li, Xiao, Li, Zhen, Zhu, Hongwei, Ren, Tianling, Plant, David
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report the enhanced photovoltaic properties in polycrystalline BiFeO 3 (BFO) thin films with graphene as top electrodes. The short circuit current density ( J sc ) and open circuit voltage of the heterojunction are measured to be 25 μ A/cm 2 and 0.44V, respectively, much higher than the reported values for polycrystalline BFO with indium tin oxide (ITO) as top electrodes. Influence of HNO 3 treatment on the photovoltaic properties is studied, and a significant photocurrent density improvement from 25 μ A/cm 2 to 2.8 mA/cm 2 is observed. A metal-intrinsic semiconductor-metal model is proposed to explain the graphene induced enhancement comparing with traditional ITO.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3644134