Cleaved-facet violet laser diodes with lattice-matched Al 0.82 In 0.18 N / GaN multilayers as n -cladding

Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al 0.82 In 0.18 N / GaN multilayer as the cladding on the n -side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V n , where n ∼ 3 at current densities appropriate to laser operation.