Temperature-dependent forward gate current transport in atomic-layer-deposited Al 2 O 3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor

The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al 2 O 3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al 2 O 3 / AlGaN / GaN MISHEMT. Fowler-Nordheim tunneling was found to be dominant at low temperature ( T < 0 ° C ) and high electrical filed, whereas trap assistant tunneling was found to be dominant at medium electrical field and high temperature ( T > 0 ° C ) .