Single crystalline Pr 2 − x Y x O 3 ( x = 0 - 2 ) dielectrics on Si with tailored electronic and crystallographic structure

Crystalline oxides on Si with tailored electronic and crystallographic properties are of importance for the integration of functional oxides or alternative semiconductors to enable novel device concepts in Si microelectronics. We present an electronic band gap study of single crystalline Pr 2 − x Y x O 3 ( 0 ≤ x ≤ 2 ) heterostructures on Si(111). The perfect solubility of the isomorphic bixbyites Pr 2 O 3 and Y 2 O 3 during molecular beam epitaxy thin film growth on Si enables a linear band gap tuning. Special focus is devoted to the determination of the electronic band offsets across the dielectric/Si interface. In addition, the composition x allows to control the crystallographic lattice parameter where, for example, Pr 0.8 Y 1.2 O 3 enables the growth of fully lattice matched oxide heterostructures on Si.