Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

We present comparative investigations of single phase In x Ga 1 − x N alloys for a varying In content ( x = 0.07 to 0.14) grown by metal organic chemical vapor deposition (MOCVD) technique. While the composition was determined using secondary ion mass spectroscopy, we have investigated the microstructures in In x Ga 1 − x N / GaN films by using transmission electron microscopy and correlated these with the refractive index of the material. Based on ellipsometric analysis of the films, the dispersion of optical indices for In x Ga 1 − x N films is determined by using Tauc-Lorentz dispersion equations.