Thermal stability of TiN metal gate prepared by atomic layer depositionor physical vapor deposition on HfO 2 high-K dielectric

In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO 2 high-K dielectric is investigated and compared by physical and electrical analysis. After an...

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Veröffentlicht in:Applied physics letters 2010-03, Vol.96 (11), p.113510-113510-3
Hauptverfasser: Wu, L., Yu, H. Y., Li, X., Pey, K. L., Pan, J. S., Chai, J. W., Chiu, Y. S., Lin, C. T., Xu, J. H., Wann, H. J., Yu, X. F., Lee, D. Y., Hsu, K. Y., Tao, H. J.
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Zusammenfassung:In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO 2 high-K dielectric is investigated and compared by physical and electrical analysis. After annealing of the TiN / HfO 2 stack at 1000 ° C for 30 s, it is observed that: (1) Nitrogen tends to out-diffuse from TiN for all the samples; (2) Oxygen from the interfacial layer (IL) between HfO 2 and Si tends to diffuse toward TiN. PVD Ti-rich TiN shows a wider oxygen distribution in the gate stack, and a thinner IL than the N-rich sample. Ti penetration into HfO 2 is also observed in the Ti-rich sample, which can potentially lead to the dielectric break-down. Besides, the oxygen out-diffusion can be significantly suppressed for ALD TiN compared to the PVD TiN samples.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3365241