Thermal stability of TiN metal gate prepared by atomic layer depositionor physical vapor deposition on HfO 2 high-K dielectric
In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO 2 high-K dielectric is investigated and compared by physical and electrical analysis. After an...
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Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (11), p.113510-113510-3 |
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Zusammenfassung: | In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on
HfO
2
high-K dielectric is investigated and compared by physical and electrical analysis. After annealing of the
TiN
/
HfO
2
stack at
1000
°
C
for 30 s, it is observed that: (1) Nitrogen tends to out-diffuse from TiN for all the samples; (2) Oxygen from the interfacial layer (IL) between
HfO
2
and Si tends to diffuse toward TiN. PVD Ti-rich TiN shows a wider oxygen distribution in the gate stack, and a thinner IL than the N-rich sample. Ti penetration into
HfO
2
is also observed in the Ti-rich sample, which can potentially lead to the dielectric break-down. Besides, the oxygen out-diffusion can be significantly suppressed for ALD TiN compared to the PVD TiN samples. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3365241 |