Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO 3 : Evidence for the origins of enhanced memory performance

We investigated advanced impurity trap memory (ITM) with atomic-scale Ti impurities on LaAlO 3 . Our ITM showed excellent memory characteristics, including a memory window (MW) of 5 V under + 12 V / − 10 V , ∼ 44 % retained charge in 10 yr retention at 85 ° C , and endurance without MW degradation up to 10 4 cycles . To understand the origins of these enhanced characteristics, we conducted various physical analyses. Our results confirmed that the incorporation of ultrathin LaAlO 3 , featuring both thermodynamic stability for diffusion barrier of Ti and favorable energy band structure together with high dielectric constant for bandgap engineering of tunnel oxide, is responsible for enhanced performance.