Hydrosilylation of 1‐dodecene on Nanostructured Porous Silicon Surface: Role of Current Density and Stabilizing Agent
We report the formation of nanostructured PS on boron doped p‐type silicon wafer (100) by electrochemical anodization using aqueous hydrofluoric acid and isopropyl alcohol solution at different current densities 20 mAcm −2 and 50 mAcm −2 with pore size being 20–30 nm and 50–60 nm, respectively. Fo...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | We report the formation of nanostructured PS on boron
doped
p‐type silicon wafer (100) by electrochemical anodization using aqueous hydrofluoric
acid and
isopropyl alcohol solution at different current densities
20
mAcm
−2
and
50
mAcm
−2
with pore size being 20–30 nm and 50–60 nm, respectively.
For organic functionalization of PS
surface 1‐Dodecene
treatment under
UV light was done. PL, FTIR and XPS studies have been carried out to characterize the
PS after
surface
modification using dodecene. Stability studies were performed under
normal ambience and humid condition for as‐anodized (Fresh PS) and dodecene‐treated
samples. It is observed that the dodecene functionalized samples were more stable than
as‐anodized porous silicon. The present study demonstrates that nanoporous silicon can provide
chemically modified stable and high surface area for the sensing applications of PS. |
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ISSN: | 0094-243X 1551-7616 |
DOI: | 10.1063/1.3183468 |