Hydrosilylation of 1‐dodecene on Nanostructured Porous Silicon Surface: Role of Current Density and Stabilizing Agent

We report the formation of nanostructured PS on boron doped p‐type silicon wafer (100) by electrochemical anodization using aqueous hydrofluoric acid and isopropyl alcohol solution at different current densities 20  mAcm −2 and 50  mAcm −2 with pore size being 20–30 nm and 50–60 nm, respectively. Fo...

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Hauptverfasser: Singh, Shalini, Sharma, Shailesh N., Govind, Khan, Mukhtar A., Singh, P. K.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We report the formation of nanostructured PS on boron doped p‐type silicon wafer (100) by electrochemical anodization using aqueous hydrofluoric acid and isopropyl alcohol solution at different current densities 20  mAcm −2 and 50  mAcm −2 with pore size being 20–30 nm and 50–60 nm, respectively. For organic functionalization of PS surface 1‐Dodecene treatment under UV light was done. PL, FTIR and XPS studies have been carried out to characterize the PS after surface modification using dodecene. Stability studies were performed under normal ambience and humid condition for as‐anodized (Fresh PS) and dodecene‐treated samples. It is observed that the dodecene functionalized samples were more stable than as‐anodized porous silicon. The present study demonstrates that nanoporous silicon can provide chemically modified stable and high surface area for the sensing applications of PS.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3183468