Investigation of two-branch boron diffusion from vapor phase in n -type 4 H - Si C
Boron diffusion from gas phase was implemented for p -type doping of 4 H - Si C at temperatures in the range of 1800 - 2000 ° C . A two-branch diffusion associated with two different diffusion mechanisms was observed. The activation energy E a and prefactor D 0 were calculated for each diffusion bra...
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Veröffentlicht in: | Applied physics letters 2008-08, Vol.93 (5), p.052101-052101-3 |
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Zusammenfassung: | Boron diffusion from gas phase was implemented for
p
-type doping of
4
H
-
Si
C
at temperatures in the range of
1800
-
2000
°
C
. A two-branch diffusion associated with two different diffusion mechanisms was observed. The activation energy
E
a
and prefactor
D
0
were calculated for each diffusion branch, that are
E
a
=
7.258
eV
∕
D
0
=
1.931
×
10
6
cm
2
∕
s
and
E
a
=
8.742
eV
∕
D
0
=
2.126
×
10
7
cm
2
∕
s
for fast and slow diffusion, respectively. It has been confirmed that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of diffusion profile has mostly deep level
D
centers. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2968306 |